Capping Layer on Thin Si Film for µ-Czochralski Process with Excimer Laser Crystallization-Reference-Cited by-同舟云学术

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Capping Layer on Thin Si Film for µ-Czochralski Process with Excimer Laser Crystallization

Published:2006-05-25 Issue:5B Volume:45 Page:4340-4343
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Vikas Rana,Ishihara Ryoichi,Hiroshima Yasushi,Abe Daisuke,Inoue Satoshi,Shimoda Tatsuya,Metselaar Wim,Beenakker Kees

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of a capping oxide layer on polycrystalline-silicon thin-film transistors fabricated by continuous-wave laser crystallization;Japanese Journal of Applied Physics;2018-05-23

2. Boosting the kesterite Cu2ZnSnS4 solar cells performance by diode laser annealing;Solar Energy Materials and Solar Cells;2018-02

3. Correlation of the crystal orientation and electrical properties of silicon thin films on glass crystallized by line focus diode laser;Thin Solid Films;2016-06

4. Formation of regularly arranged large grain silicon islands by using embedded micro mirrors in the flash crystallization of amorphous silicon;Journal of Applied Physics;2014-01-21

5. Diode laser crystallization processes of Si thin-film solar cells on glass;EPJ Photovoltaics;2014

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