High Electron Mobility Transistors Yield Improvement with Ultrasonically Assisted Recess for High-Speed Integrated Circuits
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A CPW-Based 77 GHz Power Amplifier with Cascode Structure Using a 130 nm In0.88GaP/In0.4AlAs/In0.4GaAs mHEMTs;Journal of electromagnetic engineering and science;2009-12-31
2. 610 GHz InAlAs/In0.75GaAs Metamorphic HEMTs with an Ultra-Short 15-nm-Gate;2007 IEEE International Electron Devices Meeting;2007-12
3. Gate Length Reduction Technology for Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As High Electron Mobility Transistors;Japanese Journal of Applied Physics;2007-04-24
4. 40nm In0.7GaAs HEMTs with Novel HSQ Based T-gate Process;2006 European Microwave Integrated Circuits Conference;2006-09
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