High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells Using Very High Frequency Plasma at Atmospheric Pressure-Reference-Cited by-同舟云学术

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High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells Using Very High Frequency Plasma at Atmospheric Pressure

Published:2006-04-25 Issue:4B Volume:45 Page:3587-3591
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kakiuchi Hiroaki,Ohmi Hiromasa,Kuwahara Yasuhito,Matsumoto Mitsuhiro,Ebata Yusuke,Yasutake Kiyoshi,Yoshii Kumayasu,Mori Yuzo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Characteristics of silicon nitride deposited by very high frequency (162 MHz)-plasma enhanced atomic layer deposition using bis(diethylamino)silane;Nanotechnology;2020-11-26

4. Atmospheric Pressure Plasmas: Low-Temperature Processes;Encyclopedia of Plasma Technology;2016-12-12

5. Atmospheric-pressure low-temperature plasma processes for thin film deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-05

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