Highly Reliable 0.15 µm/14 F2Cell Ferroelectric Random Access Memory Capacitor Using SrRuO3Buffer Layer-Reference-Cited by-同舟云学术

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Highly Reliable 0.15 µm/14 F2Cell Ferroelectric Random Access Memory Capacitor Using SrRuO3Buffer Layer

Published:2006-04-25 Issue:4B Volume:45 Page:3198-3201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Heo Jang-Eun,Bae Byoung-Jae,Yoo Dong-Chul,Nam Sang-Don,Lim Ji-Eun,Im Dong-Hyun,Joo Suk-Ho,Jung Yong-Ju,Choi Suk-Hun,Park Soon-Oh,Kim Hee-Seok,Chung U-In,Moon Joo-Tae

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystal orientation dependency of ferroelectric property in rhombohedral Pb(Zr,Ti)O3films;Japanese Journal of Applied Physics;2014-01-01

2. Fram Ferroelectric Memories;Ferroelectric Dielectrics Integrated on Silicon;2013-02-27

3. Fabrication and characterization of a ferroelectric-gate FET With a ITO/PZT/SRO/Pt stacked structure;2010 International Conference on Microelectronics;2010-12

4. Ferroelectric Random Access Memory;Nanotechnology;2010-07-15

5. Composition Dependency of Epitaxial Pb(Zr,Ti)O3Films with Different Film Thickness;Ferroelectrics;2009-10-28

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