Reliability and Memory Characteristics of Sequential Laterally Solidified Low Temperature Polycrystalline Silicon Thin Film Transistors with an Oxide–Nitride–Oxide Stack Gate Dielectric-Reference-Cited by-同舟云学术

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Reliability and Memory Characteristics of Sequential Laterally Solidified Low Temperature Polycrystalline Silicon Thin Film Transistors with an Oxide–Nitride–Oxide Stack Gate Dielectric

Published:2006-04-25 Issue:4B Volume:45 Page:3154-3158
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hsieh Szu-I,Chen Hung-Tse,Chen Yu-Cheng,Chen Chi-Lin,Lin Jia-Xing,King Ya-Chin

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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