Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation-Reference-Cited by-同舟云学术

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Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation

Published:2006-04-25 Issue:4B Volume:45 Page:3398-3400
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Seung-Chul,Ha Min-Woo,Lim Ji-Yong,Her Jin-Cherl,Seo Kwang-Seok,Han Min-Koo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A new lateral AlGaN/GaN Schottky barrier diode combining with floating metal rings and P-guard rings for high breakdown voltage;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

2. The Influence of Recessed Floating Metal Rings Structure on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes;physica status solidi (a);2021-11-23

3. AlGaN/GaN Diodes with Ni Schottky Barrier and Recessed Anodes;2019 International Siberian Conference on Control and Communications (SIBCON);2019-04

4. GaInN/GaN solar cells made without p-type material using oxidized Ni/Au Schottky electrodes;Materials Science in Semiconductor Processing;2016-11

5. Investigation of Post Oxidation Annealing Effect on H2O2-Grown-Al2O3/AlGaN/GaN MOSHEMTs;IEEE Journal of the Electron Devices Society;2016-09

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