(111)-Oriented Zn3N2Growth ona-Plane Sapphire Substrates by Molecular Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Silicon doping and N2 annealing effects on Zn3N2 thin film transistors;Vacuum;2022-03
2. Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties;Journal of Applied Physics;2021-08-14
3. Successful growth of Zinc Nitride thin films by vacuum tube furnace using nitrogen as source gas;Ceramics International;2021-07
4. Effect of thermal oxidation on the optical, electrical, and chemical properties of zinc nitride films grown by reactive magnetron sputtering;Thin Solid Films;2020-03
5. Optical and surface properties of ZnN thin films manufactured by radio frequency reactive magnetron sputtering;Optik;2019-08
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