Electrical, Optical and Material Properties of ZnO-Doped Indium–Tin Oxide Films Prepared Using Radio Frequency Magnetron Cosputtering System at Room Temperature-Reference-Cited by-同舟云学术

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Electrical, Optical and Material Properties of ZnO-Doped Indium–Tin Oxide Films Prepared Using Radio Frequency Magnetron Cosputtering System at Room Temperature

Published:2006-04-25 Issue:4B Volume:45 Page:3526-3530
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liu Day-Shan,Lin Chun-Hsing,Huang Bing-Wen,Wu Chun-Ching

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermoelectric Properties of Zinc-Doped Indium Tin Oxide Thin Films Prepared Using the Magnetron Co-Sputtering Method;Coatings;2019-11-24

2. Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors;Thin Solid Films;2014-03

3. The electronic structure of co-sputtered zinc indium tin oxide thin films;Journal of Applied Physics;2011-10

4. Amorphous In-Sn-Zn-O Films Deposited on Polymer and Glass Substrates Using Co-Sputtering System;Journal of Nanoelectronics and Optoelectronics;2011-08-01

5. Ti-Doped Indium Tin Oxide Thin Films for Transparent Field-Effect Transistors: Control of Charge-Carrier Density and Crystalline Structure;ACS Applied Materials & Interfaces;2011-06-23

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