Characteristics of Flip-Chip InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates-Reference-Cited by-同舟云学术

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Characteristics of Flip-Chip InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates

Published:2006-04-25 Issue:4B Volume:45 Page:3430-3432
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wang Wei-Kai,Wuu Dong-Sing,Lin Shu-Hei,Huang Shih-Yung,Han Pin,Horng Ray-Hua

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Patterned Sapphire Substrates for III-Nitride Epitaxial Growth;International Journal of Automation Technology;2018-03-01

2. Design of patterned sapphire substrates in flip-chip LEDs for improvement of light-extraction efficiencies;Optical and Quantum Electronics;2018-03

3. Comparative experimental and simulation studies of high-power AlGaN-based 353 nm ultraviolet flip-chip and top-emitting LEDs;Japanese Journal of Applied Physics;2018-02-05

4. Increased viewing angle and light extraction efficiency of flip-chip light-emitting diode using double-side patterned sapphire substrate;Scripta Materialia;2015-11

5. Plasmonic Crystals: Controlling Light With Periodically Structured Metal Films;Photonics;2015-02-27

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