A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low Reset Current and Power Consumption-Reference-Cited by-同舟云学术

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A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low Reset Current and Power Consumption

Published:2006-07-14 Issue:No. 28 Volume:45 Page:L726-L729
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yin You,Miyachi Akihira,Niida Daisuke,Sone Hayato,Hosaka Sumio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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