Structure, Materials and Shape Optimization of Magnetic Tunnel Junction Devices: Spin-Transfer Switching Current Reduction for Future Magnetoresistive Random Access Memory Application-Reference-Cited by-同舟云学术

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Structure, Materials and Shape Optimization of Magnetic Tunnel Junction Devices: Spin-Transfer Switching Current Reduction for Future Magnetoresistive Random Access Memory Application

Published:2006-05-09 Issue:5A Volume:45 Page:3835-3841
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Huai Yiming,Apalkov Dmytro,Diao Zhitao,Ding Yunfei,Panchula Alex,Pakala Mahendra,Wang Lien-Chang,Chen Eugene

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Analysis of Magnetic Tunnel Junction for Spintronic-Based STT-MRAM;SPIN;2022-09

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3. Thermally consistent SPICE model for magnetic tunnel junction with multi-layered structures via interlayer interaction;Japanese Journal of Applied Physics;2020-05-13

4. Φ memristor: Real memristor found;Journal of Applied Physics;2019-02-07

5. Performance analysis of DSHE based memories;Spintronics XI;2018-09-20

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