An Examination of the Angular Correlation of Annihilation Radiation in Silicon Single Crystal-Reference-Cited by-同舟云学术

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An Examination of the Angular Correlation of Annihilation Radiation in Silicon Single Crystal

Published:1973-10 Issue:4 Volume:35 Page:1133-1135
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Fujiwara Kunio¹,Hyodo Toshio¹

Affiliation:

1. Institute of Physics, College of General Education, The University of Tokyo

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

https://journals.jps.jp/doi/pdf/10.1143/JPSJ.35.1133

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. STUDY ON MOMENTUM DENSITY IN SEMICONDUCTOR ALLOYS GeC and SnC BY POSITRON ANNIHILATION;International Journal of Modern Physics B;2010-07-20

2. Theoretical studies of positron annihilation in YN and ScN;Materials Chemistry and Physics;2009-03

3. Theoretical studies of the angular correlation of positron annihilation in Al1− x In x N;physica status solidi (b);2004-02-11

4. Electron momentum distributions in elemental semiconductors probed by positrons;Physical Review B;1998-05-15

5. Correlation Effects in the Compton Profile of Silicon;Physical Review Letters;1998-05-11

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