Concentration of Deep Level in InxGa1-xAsyP1-yGrown on (100) GaAs by LPE
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Published:1989-03-20
Issue:Part 1, No. 3
Volume:28
Page:559-560
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Zhu Qin-Sheng,Hiramatsu Kazumasa,Sawaki Nobuhiko,Akasaki Isamu
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering