Stimulated Emission due to Electromagnetic Breakthrough in InSb at Room Temperature
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoconductive and Non-Equilibrium Devices in HgCdTe and Related Alloys;Infrared Detectors and Emitters: Materials and Devices;2001
2. Stimulated IR emission by quantum magnetoelectric photoeffect of narrow-gap semiconductors;IEE Proceedings - Optoelectronics;1997-10-01
3. Non-equilibrium devices in HgCdTe;Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications;1997
4. Polarization of Stimulated Emission due to the Magnetoelectric-Photo Effect of InSb at the Quantum Limit;Japanese Journal of Applied Physics;1992-10-01
5. Interband Landau Emission Due to Magnetoelectric-Photo Effectin Bulk InSb: Quantum Aspects of Stimulated Emissionat High Magnetic Fields;Journal of the Physical Society of Japan;1991-07-15
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