InGaAsP/InP Lasers with Two Reactive-Ion-Etched Mirror Facets
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 35 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Selective etching of AlGaInP laser structures in a BCl3/Cl2inductively coupled plasma;Semiconductor Science and Technology;2006-03-07
2. Use of atomic force microscopy for analysis of high performance InGaAsP/InP semiconductor lasers with dry-etched facets;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05
3. Comparison of ECR plasma chemistries for etching of InGaP and AlGaP;Journal of Electronic Materials;1997-11
4. On-wafer facet processing for low cost optoelectronic components;Electronics Letters;1997
5. Comparison of and plasma chemistries for dry etching of InGaAlP alloys;Semiconductor Science and Technology;1996-08-01
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