High-Power Operation of AlGaAs/GaAs Large-Optical-Cavity Laser Diode with ZnSxSe1-x (x=0.06) Layer Grown by Adduct-Source Metalorganic Chemical Vapor Deposition Method-Reference-Cited by-同舟云学术

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High-Power Operation of AlGaAs/GaAs Large-Optical-Cavity Laser Diode with ZnSxSe1-x (x=0.06) Layer Grown by Adduct-Source Metalorganic Chemical Vapor Deposition Method

Published:1989-11-01 Issue:11A Volume:28 Page:L2085
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tsunekawa Yoshifumi,Watanabe Kazuaki,Seki Tetsuya,Asaka Tatsuya,Yamasaki Yasuji,Takamura Takashi,Iwano Hideaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.1143/JJAP.28.L2085/pdf

Reference12 articles.

1. High-power CW operation of 780 nm T3 laser diodes

2. Low-threshold, high-power zero-order lateral-mode DQW-SCH metal-clad ridge waveguide (AlGa)As/GaAs lasers

3. GaAlAs laser diodes with metalorganic chemical vapor deposition grown ZnSe layer for injection blocking and optical confinement

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 0.78- and 0.98-μm ridge-waveguide lasers buried with AlGaAs confinement layer selectively grown by chloride-assisted MOCVD;IEEE Journal of Selected Topics in Quantum Electronics;1995-06

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