SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices-Reference-Cited by-同舟云学术

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SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

Published:2017-12-19 Issue: Volume: Page:
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Author:

Cressler John D.

Publisher

CRC Press

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective Digital Etching of Silicon–Germanium Using Nitric and Hydrofluoric Acids;ACS Applied Materials & Interfaces;2020-09-24

2. Breaking the absorption limit of Si toward SWIR wavelength range via strain engineering;Science Advances;2020-07-31

3. Silicon‐Germanium (SiGe) Nanostructures for Thermoelectric Devices: Recent Advances and New Approaches to High Thermoelectric Efficiency;New Research on Silicon - Structure, Properties, Technology;2017-05-31

4. Application of Pelletron Accelerator to Study High Total Dose Radiation Effects on Semiconductor Devices;Solid State Phenomena;2015-08

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