1. JMC Stork, GL Patton, DL Harame, BS Meyerson, SS IYER, E Ganin, and EF Crabbe. SiGe heterojunction bipolar transistors. Symposium on VLSI Technology, Kyoto 1989, pp.1-4.
2. Submicrometer Si and Si-Ge epitaxial-base double-poly self-aligned bipolar transistors
3. E Crabbe, BS Meyerson, JMC Stork, and DL Harame. Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors. Digest of the IEEE International Electron Devices Meeting, Washington, 1993, pp.83-86.
4. E Kasper, A Gruhle, and H Kibbel. High speed SiGe-HBT with very low base sheet resistivity. Digest of the IEEE International Electron Devices Meeting, Washington, 1993, pp.79-81.
5. Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits