1. Enhanced performance virtual substrate heterojunction bipolar transistor using strained-Si/SiGe emitter
2. K. Rim, J. Chu, H. Chen, K. A. Jenkins, T. Kanarsky, K. Lee, A. Mocuta, H. Zhu, R. Roy, J. Newbury, J. Ott, K. Petrarca, P. Mooney, D. Lacey, S. Koester, K. Chan, D. Boyd, M. Leong, and H.S. Wong, "Characteristics and device design of sub-100 nm strained-Si n- and p-MOSFETs," IEEE VLSI Tech. Symp. Dig., pp.98-99, 2002.
3. High‐mobilityp‐channel metal‐oxide‐semiconductor field‐effect transistor on strained Si
4. High-mobility FET in strained silicon
5. J. Welser, J. L. Hoyt, and J. F. Gibbons, "NMOS and PMOS transistor fabricated in strained silicon/relaxed silicon-germanium structures," IEEE IEDM Tech. Dig., pp.1000-1003, 1992.