SiGe HBT Performance Limits

Author:

Freeman Greg,Rieh Jae-Sung,Stricker Andreas,Greenberg David

Publisher

CRC Press

Reference28 articles.

1. D Terpstra and WB de Boer. Anomalous collector base leakage in selectively grown SiGe base heterojunction bipolar transistors. Proceedings of the 29th European Solid State Device Research Conference, Leuven, 1999, pp.720-723.

2. Nonmelt laser annealing of 5-KeV and 1-KeV boron-implanted silicon

3. MC O¨ztürk, J Liu, and H Mo. Low resistivity nickel germanosilicide contacts to ultra-shallow Si1ÀxGexsource/drain junctions for nanoscale CMOS. Proceedings of the International Electron Devices Meeting, Washington, DC, 2003, pp.497-500.

4. G Freeman, D Greenberg, K Walter, and S Subbanna. SiGe HBT performance improvements from lateral scaling. Proceedings of the European Solid-State Device Research Conference, Leuven, 1999.

5. A Joseph, D Coolbaugh, M Zierak, R Wuthrich, P Geiss, Z He, X Liu, B Orner, J Johnson, G Freeman, D Ahlgren, B Jagannathan, L Lanzerotti, V Ramachandran, J Malinowski, H Chen, J Chu, P Gray, R Johnson, J Dunn, and S Subbanna. A 0.18 mm BiCMOS technology featuring 120/100 GHz (fT/fMAX) HBT and ASIC-compatible CMOS using copper interconnect. Proceedings of the 2001 Bipolar/BiCMOS Circuits and Technology Meeting, pp.143-146.

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