1. Heterostructure bipolar transistors and integrated circuits
2. G. L. Patton, D. L. Harame, J. M. C. Stork, B. S. Meyerson, G. J. Scilla, and E. Ganin, Sige-base, poly-emitter heterojunction bipolar transistors, Proc. Symp. VLSI Technol., pp.35-36, 1989.
3. A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design
4. Int. Technol. Roadmap for Semiconductors, International SEMATECH, Austin, TX, 2007.
5. W. Winkler, J. Borngraber, He. Erzgraber, Ha. Erzgraber, B. Heinemann, D. Knoll, H. J. Osten, M. Pierschel, K. Pressel, and P. Schley, Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules, CICC Proc., pp.351-358, 1998.