IC DfM for Devices and Products
Reference50 articles.
1. Aschliman, L. PDK functionality tackles length of diffusion effects. EETimes, June12,2006.
2. Kahng, A. B., Sharma, P., and Topaloglu, R. O. Exploiting STI stress for performance. Proceedings of IEEE/ACM International Conference on Computer-Aided Design, 83-90, 2007.
3. Investigation of Gate-Induced Drain Leakage (GIDL) Current in Thin Body Devices: Single-Gate Ultra-Thin Body, Symmetrical Double-Gate, and Asymmetrical Double-Gate MOSFETs