1. Investigation of Silicon-Silicon Dioxide Interface Using MOS Structure
2. A comprehensive model of PMOS NBTI degradation
3. On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN, and HCI stress
4. H. Kufluoglu and M. A. Alam, A Geometrical Unification of the Theories of NBTI and HCI Time-Exponents and Its Implications for Ultra-Scaled Planar and Surround Gate MOSFETs, IEEE IEDM Tech. Dig., 113-116, 2004.