Gamma-ray Irradiated Organic Thin Film Transistors Based on Perfluoropentacene with Polyimide Gate Insulator-Reference-Cited by-同舟云学术

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Gamma-ray Irradiated Organic Thin Film Transistors Based on Perfluoropentacene with Polyimide Gate Insulator

Published:2012 Issue:4 Volume:25 Page:493-496
ISSN:0914-9244
Container-title:Journal of Photopolymer Science and Technology
language:en
Short-container-title:J. Photopol. Sci. Technol.

Author:

Takayanagi Yutaro,Ohuchi Hirokuni,Duan Zongfan,Okukawa Takanori,Yanagi Yuichiro,Yoshida Akira,Taguchi Mitsumasa,Hirao Toshio,Nishioka Yasushiro

Publisher

Technical Association of Photopolymers, Japan

Subject

Materials Chemistry,Organic Chemistry,Polymers and Plastics

Link

https://www.jstage.jst.go.jp/article/photopolymer/25/4/25_493/_pdf

Reference14 articles.

1. 1. C. Reese, M. Robert, M.M. Ling, and Z. Bao, Mater. Today, 7 (2004), 20.

2. 2. C.D. Dimitrakopoulos, and P. R. L. Malenfant, Adv. Mater.,14 (2002), 99.

3. 3. G. Horowitz, Adv. Mater., 10 (1998), 365.

4. 4. J. Zaumseil, T. Someya, Z. Bao, Y. LOO, R. Cirelli, and J.A. Rogers, Appl. Phys. Lett., 82 (2003), 793.

5. 5. M. Kitamura and Y. Arakawa, J. Phys. Condens. Matter. 20 (2008), 184011.

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