Etch Properties of 193nm Resists: Issues and Approaches.-Reference-Cited by-同舟云学术

Etch Properties of 193nm Resists: Issues and Approaches.

Published:2002 Issue:3 Volume:15 Page:521-527
ISSN:0914-9244
Container-title:Journal of Photopolymer Science and Technology
language:en
Short-container-title:J. Photopol. Sci. Technol.

Author:

Padmanaban Munirathna,Alemy Eric,Dammel Ralph,Kim Woo-Kyu,Kudo Takanori,Lee SangHo,Rahman Dalil,Chen Wan-Lin,Sadjadi Reza M.,Livesay William,Ross Matthew

Publisher

Technical Association of Photopolymers, Japan

Subject

Materials Chemistry,Organic Chemistry,Polymers and Plastics

Link

http://www.jstage.jst.go.jp/article/photopolymer1988/15/3/15_3_521/_pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Precuring implant photoresists for shrink and patterning control;Journal of Micro/Nanolithography, MEMS, and MOEMS;2013-09-05

2. Effects of vacuum ultraviolet photons, ion energy and substrate temperature on line width roughness and RMS surface roughness of patterned 193 nm photoresist;Journal of Physics D: Applied Physics;2011-02-08

3. Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-01

4. Comparing 193 nm photoresist roughening in an inductively coupled plasma system and vacuum beam system;Journal of Physics D: Applied Physics;2009-11-30

5. Studies of plasma surface interactions during short time plasma etching of 193 and 248 nm photoresist materials;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006