Structural Design of Resin Matrix and Acid-labile Dissolution Inhibitor of Chemical Amplification Positive Electron-beam Resist for Gigabit Lithography.-Reference-Cited by-同舟云学术

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Structural Design of Resin Matrix and Acid-labile Dissolution Inhibitor of Chemical Amplification Positive Electron-beam Resist for Gigabit Lithography.

Published:1998 Issue:4 Volume:11 Page:547-552
ISSN:0914-9244
Container-title:Journal of Photopolymer Science and Technology
language:en
Short-container-title:J. Photopol. Sci. Technol.

Author:

Sakamizu Toshio,Arai Tadasi,Katoh Kohji,Uchino Shou-ichi,Murai Fumio,Suzuki Yasunori,Shiraishi Hiroshi

Publisher

Technical Association of Photopolymers, Japan

Subject

Materials Chemistry,Organic Chemistry,Polymers and Plastics

Link

http://www.jstage.jst.go.jp/article/photopolymer1988/11/4/11_4_547/_pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Applications of Controlled Macromolecular Architectures to Lithography;Macromolecular Engineering;2011-09-23

2. Acid-Breakable Resin-Based Chemical Amplification Positive Resist for Electron-Beam Mastering: Design and Lithographic Performance;Japanese Journal of Applied Physics;2004-07-29

3. Surface and line-edge roughness in acid-breakable resin-based positive resist;Advances in Resist Technology and Processing XX;2003-06-11

4. Electron-beam nanolithography and line-edge roughness of acid-breakable resin-based positive resist;Microelectronic Engineering;2002-07

5. A Novel Electron Beam-Induced Reaction of Sulfonium Salt in the Crystalline State;Chemistry Letters;2001-05

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