Feature-size Control by Pattern Transfer Etching in Nanoimprint Lithography for Half-pitch 24 nm Damascene Interconnect-Reference-Cited by-同舟云学术

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Feature-size Control by Pattern Transfer Etching in Nanoimprint Lithography for Half-pitch 24 nm Damascene Interconnect

Published:2024-06-25 Issue:5 Volume:37 Page:449-456
ISSN:0914-9244
Container-title:Journal of Photopolymer Science and Technology
language:en
Short-container-title:J. Photopol. Sci. Technol.

Author:

Suzuki Kenta¹,Ueda Tetsuya¹,Hiroshima Hiroshi¹,Hayashi Yoshihiro¹,Ishida Masaki²,Funayoshi Tomomi²,Hiura Hiromi²,Hasegawa Noriyasu²,Yamamoto Kiyohito²

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST)

2. Canon Inc.

Publisher

Technical Association of Photopolymers, Japan

Link

https://www.jstage.jst.go.jp/article/photopolymer/37/5/37_449/_pdf

Reference21 articles.

1. 1. J. Haisma, M. Verheijen, K. Heuvel, and J. Berg, J. Vac. Sci. Technol. B, 14 (1996) 4124.

2. 2. M. Colburn, S. Johnson, M. Stewart, S. Damle, T. Bailey, B. Choi, M. Wedlake, T. Michaelson, S. V. Sreenivasan, J. Ekerdt, and C. G. Willson, Proc. SPIE, 3676 (1999) 379.

3. 3. T. Higashiki, T. Nakasugi, and I. Yoneda, J. Micro/Nanolith. MEMS MOEMS, 10 (2011) 043008.

4. 4. S. Matsui, H. Hiroshima, Y. Hirai, and M. Nakagawa, Microelectron. Eng., 133 (2015) 134.

5. 5. K. Suzuki, S.-W. Youn, and H. Hiroshima, Appl. Phys. Lett., 109 (2016) 143102.

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