Spin-on Metal Oxide Hard Mask as Underlayer for EUV Lithography with Chemically Amplified Resist-Reference-Cited by-同舟云学术

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Spin-on Metal Oxide Hard Mask as Underlayer for EUV Lithography with Chemically Amplified Resist

Published:2024-06-25 Issue:3 Volume:37 Page:327-333
ISSN:0914-9244
Container-title:Journal of Photopolymer Science and Technology
language:en
Short-container-title:J. Photopol. Sci. Technol.

Author:

Li Zhong¹,Kampitakisa Viktor²,Her Youngjun²,Antonio Charito¹,Kudo Takanori¹,Mullen Salem¹,Muthuswamy Elayaraja¹,Polishchuk Orest¹,Ware Adam¹,Wolfer Elizabeth¹,Yang Dong¹,Cho JoonYeon³,Hishida Aritaka³

Affiliation:

1. EMD Electronics

2. Merck Chemicals

3. Merck Electronics

Publisher

Technical Association of Photopolymers, Japan

Link

https://www.jstage.jst.go.jp/article/photopolymer/37/3/37_327/_pdf

Reference15 articles.

1. 1. R. R. Dammel, "Diazonaphthoquinone-based Resists", SPIE Optical Engineering Press, Bellingham, WA (1993).

2. 2. H. Ito, IBM J. Res. Develop., 44 (2000) 119.

3. 3. C. K. Ober, H. Xu, V. Kosma, K. Sakai, and E. P. Giannelis, Proc. SPIE, 10583 (2018) 1058306.

4. 4. T. Couteau and M. Carcasi, Proc. SPIE, 6153 (2006) 61533H.

5. 5. S. S. Sethi, R. G. Distasio, D. H. Ziger, J. E. Lamb III, and T. D. Flaim, Proc. SPIE, 1463 (1991) 30.

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