1. 1. The ITRS can be downloaded from http://public.itrs.net.
2. 2. Jonathan Cobb et al., “Controlling line-edge roughness to within reasonable limits,” to be published in Advances in Resist Technology and Processing XX, edited by Ted Fedynyshyn, Proc. SPIE 5039, 2003.
3. 3. W. Hinsberg, F. Houle, G. Wallraff, M. Sanchez, M. Morrison, J. Hoffnagle, H. Ito, C. Nguyen, C.E. Larson, P.J. Brock and G. Breyta, “Factors Controlling Pattern Formation in Chemically Amplified Resists at Sub-100nm Dimensions”, J Photopolym. Sci. Technol., Vol.12 (4), 1999, 649.
4. 4. T. Itani, H. Yoshino, S. Hashimoto, S. Hashimoto, M. Yamana, N. Samoto and K. Kasama, “Polymer Structure Effect on dissolution Characteristics and Acid Diffusion in Chemically Amplified Deep Ultraviolet Resists DUV”, J. Vac. Sci. Technol. B 15 (6) (1997) 2541.
5. 5. Resists were based on EUV-2D (XP98248B) type formulations and were composed of ESCAP terpolymers, onium-type PAG, a non-nucleophilic base and ethyl lactate. The polymers were prepared using free radical polymerization to generate the random terpolymers with weight averaged molecular weights (Mw) of 2.9, 4.9, 6.1, 9.1, 16.1, 33.5 Kg/mole.