Theory of The Oxidation of Metals and Semiconductors: The Phenomenon of Isoparametric Generation of Nonstoichiometric Point Defects in Anodic Oxide Films-Reference-Cited by-同舟云学术

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Theory of The Oxidation of Metals and Semiconductors: The Phenomenon of Isoparametric Generation of Nonstoichiometric Point Defects in Anodic Oxide Films

Published:2019 Issue:11 Volume:8 Page:N196-N200
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Ovchinnikov Valery^ORCID

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Dell'Oca C. J. Pulfrey D. L. Young L. , Anodic Oxide Films, in Physics of Thin Films, V.6, Academic Press, London-New York (1971).

2. Vijh A. K. Diggle J. W. , Oxides and oxide films. V.2, Dekker, New York (1973).

3. Theory of the oxidation of metals

4. Electrolytic conduction of a solid insulator at high fields The formation of the anodic oxide film on aluminium

5. A Theory of the Kinetics of Formation of Anode Films at High Fields

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Control of Oxygen Vacancies of 2D-InO_x Fabricated by Liquid Metal Printing via Temperature Modulation;The Journal of Physical Chemistry C;2024-03-16

2. Reactive-Vacancy Mechanism of Pore Growth in Oxide Films;ECS Journal of Solid State Science and Technology;2021-10-01

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