Author:
Grzybowski Gordon,Beeler Richard T.,Jiang Liying,Smith David J,Chizmeshya Andrew V.G.,Kouvetakis John,Menéndez Jose
Abstract
Thick ( > 500 nm) Ge1-y
Sn
y
films with Sn concentrations as high as y = 0.09 were grown on Si substrates by ultrahigh-vacuum chemical vapor deposition using trigermane (Ge3H8) and deuterated stannane (SnD4) as molecular sources. The trigermane precursor makes it possible to grow Ge at lower temperatures, and is therefore more compatible with the low temperatures required for high Sn incorporation. The properties of the films are investigated in detail using a variety of structural probes. All films exhibit a sizable photoluminescence signal, with a direct band gap downshift relative to Ge that approaches 0.3 eV for the highest Sn concentrations.
Publisher
The Electrochemical Society
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献