HfO2/Al2O3Bilayered High-kDielectric for Passivation and Gate Insulator in 4H-SiC Devices
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference22 articles.
1. SiC power devices — Present status, applications and future perspective
2. Reliability of SiC power devices and its influence on their commercialization - review, status, and remaining issues
3. Electronic Properties of Atomic-Layer-Deposited Al[sub 2]O[sub 3]/Thermal-Nitrided SiO[sub 2] Stacking Dielectric on 4H SiC
4. Aluminium nitride deposition on 4H-SiC by means of physical vapour deposition
5. Toward the Understanding of Stacked Al-Based High-k Dielectrics for Passivation of 4H-SiC Devices
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improving quality of AlN films on GaAs substrate via in-situ plasma pre-treatment in plasma enhanced atomic layer deposition;Materials Letters;2024-07
2. Multistate, Ultrathin, Back-End-of-Line-Compatible AlScN Ferroelectric Diodes;ACS Nano;2024-06-03
3. Growth of gallium cerium oxide passivation layer on 4H-Silicon carbide substrate and its metal-oxide-semiconductor characteristics;Ceramics International;2024-01
4. Improving Quality of Aln Films Via In-Situ Plasma Pre-Treatment in Plasma Enhanced Atomic Layer Deposition;2024
5. Adhesion and electronic properties of 4H-SiC/α-Al2O3 interfaces with different terminations calculated via first-principles methods;Surfaces and Interfaces;2023-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3