Band Alignment at n-GaN/Electrolyte Interface Explored by Photo-Induced Offset of Open-Circuit Potential for Efficient Water Splitting-Reference-Cited by-同舟云学术

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Band Alignment at n-GaN/Electrolyte Interface Explored by Photo-Induced Offset of Open-Circuit Potential for Efficient Water Splitting

Published:2017-04-25 Issue:4 Volume:77 Page:25-30
ISSN:1938-6737
Container-title:ECS Transactions
language:en
Short-container-title:ECS Trans.

Author:

Imazeki Yuuki,Iwai Yohei,Nakamura Akihiro,Koike Kayo,Sato Shin-ichiro,Ohshima Takeshi,Fujii Katsushi,Sugiyama Masakazu^ORCID,Nakano Yoshiaki

Publisher

The Electrochemical Society

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fermi Level Pinning Controls Band Bending and Photochemical Charge Separation in Particles of n-SrTiO3, n-SrTiO3:Al, and n-GaAs:Te;The Journal of Physical Chemistry C;2020-07-30

2. GaN nanowires grown by halide chemical vapour deposition as photoanodes for photo-electrochemical water oxidation reactions;Nanotechnology;2020-07-29

3. Light Intensity Dependence of Photochemical Charge Separation in the BiVO4/Ru-SrTiO3:Rh Direct Contact Tandem Photocatalyst for Overall Water Splitting;The Journal of Physical Chemistry C;2020-04-14

4. Stable Unassisted Solar Water Splitting on Semiconductor Photocathodes Protected by Multifunctional GaN Nanostructures;ACS Energy Letters;2019-06-03

5. Flexible InGaN nanowire membranes for enhanced solar water splitting;Optics Express;2018-05-30

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