Effect of Thickness on the Structural and Electrical Properties of Sol-Gel-Derived (Zr,Sn)TiO[sub 4] Thin Films-Reference-Cited by-同舟云学术

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Effect of Thickness on the Structural and Electrical Properties of Sol-Gel-Derived (Zr,Sn)TiO[sub 4] Thin Films

Published:2006 Issue:5 Volume:9 Page:F31
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Yang Ru-Yuan,Weng Min-Hang,Ho Yung-Shou,Su Yan-Kuin,Yeh Yu-Ming

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference22 articles.

1. S. M. Sze , Physics of Semiconductor Devices , John Wiley & Sons, Inc., New York (1981).

2. The International Technology Roadmap for Semiconductors, 2004 , Semiconductor Industry Association, Santa Clara, CA (2004).

3. High-κ gate dielectrics: Current status and materials properties considerations

4. Tantalum Nitride Interface Layer Influence on Dielectric Properties of Hafnium Doped Tantalum Oxide High Dielectric Constant Thin Films

5. Electrical and Physical Characterization of Zirconium-Doped Tantalum Oxide Thin Films

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