Bias‐Stress Stability of GaAs MESFETs: Effect of Predeposition Storage and Cleaning Procedures-Reference-Cited by-同舟云学术

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Bias‐Stress Stability of GaAs MESFETs: Effect of Predeposition Storage and Cleaning Procedures

Published:1989-11-01 Issue:11 Volume:136 Page:3478-3481
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Dobkin Daniel M.¹²³,Besser R. S.¹²³,Helms C. R.¹²³

Affiliation:

1. Watkins‐Johnson Company, Palo Alto, California 94304

2. Watkins‐Johnson Company, Palo Alto, California 94304 and Stanford Electronics Laboratories, Stanford University, Stanford, California 94305‐4055

3. Stanford Electronics Laboratories, Stanford University, Stanford, California 94305‐4055

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2096489/pdf

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