The Polycrystalline‐Si Contact to GaAs-Reference-Cited by-同舟云学术

The Polycrystalline‐Si Contact to GaAs

Published:1986-06-01 Issue:6 Volume:133 Page:1176-1179
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Kavanagh K. L.¹²³⁴,Mayer J. W.¹²³⁴,Magee C. W.¹²³⁴,Sheets J.¹²³⁴,Tong J.¹²³⁴,Kirchner P. D.¹²³⁴,Woodall J. M.¹²³⁴,Haller I.¹²³⁴

Affiliation:

1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853

2. RCA, David Sarnoff Research Center, Princeton, New Jersey 08540

3. ASM America, Phoenix, Arizona 85040

4. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2108814/pdf

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon CMOS Ohmic Contact Technology for Contacting III-V Compound Materials;ECS Journal of Solid State Science and Technology;2013

2. Formation of WSi-based ohmic contacts to n-type GaAs;Thin Solid Films;1997-05

3. Thermally stable ohmic contacts ton‐type GaAs. VII. Addition of Ge or Si to NiInW ohmic contacts;Journal of Applied Physics;1990-09

4. Ohmic contacts to III–V compound semiconductors;Thin Solid Films;1990-01

5. Development of ohmic contact materials for GaAs integrated circuits;Materials Science Reports;1990-01