Electrical Characterization of Oxynitrided Gate Dielectrics under Constant‐Current Fowler‐Nordheim Stress-Reference-Cited by-同舟云学术

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Electrical Characterization of Oxynitrided Gate Dielectrics under Constant‐Current Fowler‐Nordheim Stress

Published:1997-09-01 Issue:9 Volume:144 Page:3299-3304
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Nguyen T. K.¹²³,Landsberger L. M.¹²³,Belkouch S.¹²³,Jean C.¹²³

Affiliation:

1. Department of Electrical and Computer Engineering, Concordia University, Montreal, Quebec H3G 1M8, Canada

2. Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada

3. Mitel Semiconductor Division, Bromont, Quebec, Canada

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1838001/pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Visible electroluminescence in hydrogenated amorphous silicon oxynitride;Journal of Applied Physics;2001-09

2. Analysis of Gate Disturbance Degradation by Nitridation of Flash Tunnel Oxide;Japanese Journal of Applied Physics;2001-04-30

3. Breakdown properties of metal/NIDOS SiO2/silicon structures;Microelectronics Reliability;1999-02

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