Materials Characterization of WSi Contacts to n+‐GaN as a Function of Rapid Thermal Annealing Temperatures-Reference-Cited by-同舟云学术

Materials Characterization of WSi Contacts to n+‐GaN as a Function of Rapid Thermal Annealing Temperatures

Published:1997-10-01 Issue:10 Volume:144 Page:L275-L277
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Cole M. W.¹²³,Ren F.¹²³,Pearton S. J.¹²³

Affiliation:

1. Army Research Laboratory, Materials Research Division, Aberdeen Proving Ground, Maryland 21005

2. Lucent Technologies, Murray Hill, New Jersey 07974

3. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1838007/pdf

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