Arsenic Dopant Influence upon the Sintering Behavior of the Aluminum‐Polysilicon Interface
Author:
Affiliation:
1. Laboratoire de Microelectronique, Universite Catholique de Louvain, Louvain‐la‐Neuve, Belgium
2. Department of Communication and Electronic Engineering, Royal Melbourne Institute of Technology, Melbourne, Australia
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/1.2115650/pdf
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dopant Diffusion and Segregation;Polycrystalline Silicon for Integrated Circuits and Displays;1998
2. Morphological instabilities of nickel and cobalt silicides on silicon;Applied Surface Science;1991-11
3. The role of interfacial segregation and microstructure in interdiffusion between aluminum and silicon;Journal of Electronic Materials;1989-11
4. A Model for Interdiffusion at Metal Semiconductor Interfaces: Conditions for Spiking;MRS Proceedings;1989
5. Dopant Diffusion and Segregation;Polycrystalline Silicon for Integrated Circuit Applications;1988
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