Real-Time Observation of Initial Thermal Oxidation on Si(110)-16x2 Surface by Photoemission Spectroscopy
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Published:2006-10-20
Issue:2
Volume:3
Page:311-316
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Suemitsu Maki,Kato Atsushi,Togashi Hideaki,Konno Atsushi,Yamamoto Yoshihisa,Teraoka Yuden,Yoshigoe Akitaka,Enta Yoshiharu,Narita Yuzuru
Abstract
Kinetics of initial oxidation of Si(110)-16x2 surface has been investigated by using real-time photoemission spectroscopy. One of the most striking features of Si(110) oxidation, in comparison with that of Si(001) surface, is the occurence of an extremely rapid oxidation in its early stage. Only 15 s after introduction of ~10^-5-Pa oxygen molecules, the Si(110) surface at 540 deg-C is already covered with 0.3-monolayer oxide. This rapid initial oxidation can be related to oxidation at or around the adatom clusters which are reportedly the major constituent of the 16x2 reconstruction on this Si(110) surface.
Publisher
The Electrochemical Society
Cited by
1 articles.
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1. Single-domained Si(110)-‘16×2’ surface;Journal of Physics: Conference Series;2008-03-01