Defects Induced in p‐Type Silicon by Photocathodic Charging of Hydrogen-Reference-Cited by-同舟云学术

Defects Induced in p‐Type Silicon by Photocathodic Charging of Hydrogen

Published:1994-06-01 Issue:6 Volume:141 Page:1539-1546
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

de Mierry P.¹²³⁴⁵,Etcheberry A.¹²³⁴⁵,Rizk R.¹²³⁴⁵,Etchegoin P.¹²³⁴⁵,Aucouturier M.¹²³⁴⁵

Affiliation:

1. LPS, CNRS, F92195 Meudon Cedex, France

2. LCEMI, CNRS, F92195 Meudon Cedex, France

3. LERMAT, ISMRA, Campus Universitaire II, CNRS, URA 1317, F14050 Caen Cedex, France

4. Max‐Planck Institut für Festkörperforschung, D7000 Stuttgart 80, Germany

5. Laboratoire de Métallurgie, Université Paris XI, CNRS, URA 1107, F91405 Orsay Cedex, France

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2054959/pdf

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