Dislocation Generation and Propagation during Flash Lamp Annealing-Reference-Cited by-同舟云学术

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Dislocation Generation and Propagation during Flash Lamp Annealing

Published:2015 Issue:7 Volume:4 Page:P195-P199
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Kissinger G.,Kot D.,Schubert M. A.,Sattler A.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

2. Modeling and regrowth mechanisms of flash lamp processing of SiC-on-silicon heterostructures

3. Dislocation Etch for (100) Planes in Silicon

4. EMIS Data review, Properties of Crystalline Silicon, Hull R. , Editor, INSPEC, London, Series No. 20 (1999).

5. Optical properties of intrinsic silicon at 300 K

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Process Management;Flash Lamp Annealing;2019

2. About the influence of deposited nitride layers on oxide precipitation after RTA pre‐treatment;physica status solidi (a);2017-05-26

3. A review of thermal processing in the subsecond range: semiconductors and beyond;Semiconductor Science and Technology;2016-09-01

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