The Enhancement of Nitrogen Incorporation in RTN[sub 2]O Annealed TEOS Oxide Fabricated on Disilane-Based Polysilicon Films-Reference-Cited by-同舟云学术

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The Enhancement of Nitrogen Incorporation in RTN[sub 2]O Annealed TEOS Oxide Fabricated on Disilane-Based Polysilicon Films

Published:2001 Issue:8 Volume:148 Page:F164
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Lee Jam Wem,Chen Won-Der,Lei Tan Fu,Lee Chung-Len

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Electrical characterization of ultra-shallow junctions formed by diffusion from a CoSi/sub 2/ layer

2. Thermal SiO2films on n+polycrystalline silicon: Electrical conduction and breakdown

3. Self-operating adaptive MLSE for digital mobile radio

4. Polyoxides grown on n/sup +/ polysilicon

5. The TEOS oxide deposited on phosphorus in-situ/POCl/sub 3/ doped polysilicon with rapid thermal annealing in N/sub 2/O

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