Development of a Photoresist Removal Method Using Ozone Gas with Water Vapor for LCD Manufacturing

Author:

Noda Seiji,Miyamoto Makoto,Horibe Hideo,Oya Izumi,Kuzumoto Masaki,Kataoka Tatsuo

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Lateral Diffusion of Na+ Ions from the Gate Edge into the Oxide for P+ and N+ Polycrystalline Silicon Gates

2. H. Kikuchi,Monthly FPD Intelligence, Chap. 4, pp. 169-172, Press Journal, Japan (1999), in Japanese.

3. Effect of Gas Addition on Ozone Ashing

4. Temperature and concentration effects on ozone ashing of photoresist

5. Natraj Narayanswami and Steve Nelson, inProceedings of the 3rd International Symposium on Ultra Clean Processing of Silicon Surfaces, pp. 66-67, Oostende, Belgium (1998).

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