Comparison of Measured and Simulated Two‐Dimensional Phosphorus Diffusion Profiles in Silicon-Reference-Cited by-同舟云学术

Comparison of Measured and Simulated Two‐Dimensional Phosphorus Diffusion Profiles in Silicon

Published:1990-05-01 Issue:5 Volume:137 Page:1573-1579
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Subrahmanyan Ravi¹²¹,Massoud Hisham Z.¹²¹,Fair Richard B.¹²¹

Affiliation:

1. Department of Electrical Engineering, Duke University, Durham, North Carolina 27706 and Microelectronics Center of North Carolina, Research Triangle Park, North Carolina 27709

2. Department of Electrical Engineering, Duke University, Durham, North Carolina 27706

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2086729/pdf

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Three-dimensional range distribution of 400 KeV Nd ions implanted into Si;Radiation Effects and Defects in Solids;2000-08

2. Lateral range spread of MeV phosphorus ions implanted in silicon measured by time-of-flight secondary ion mass spectrometry;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-03

3. Monte Carlo simulation of Boron diffusion during low energy implantation and high temperature annealing;MRS Proceedings;1997

4. Scanning probe microscopy for 2-D semiconductor dopant profiling and device failure analysis;Materials Science and Engineering: B;1996-12

5. Two‐dimensional surface dopant profiling in silicon using scanning Kelvin probe microscopy;Journal of Applied Physics;1995-03