Author:
Nelson Florence,Prasad Sinha Dhiraj,Comfort Everett,Lee Ji Ung,Diebold Alain C.,Sandin Andreas,Dougherty Daniel B.,Rowe Jack E.
Abstract
Chemical Vapor Deposition (CVD) on metallic foils and the thermal decomposition of SiC have become two of the dominant fabrication methods of large area graphene due to their industrial scalability. The work will present STEM imaging of CVD graphene performed at 60 kV with atomic resolution achieved through aberration correction. Single-crystal areas are identified as well as defect structures. Spectrscopic Ellipsometry (SE) is used to extract the dielectric function (complex refractive index) of graphene from both growth methods. Epitaxial graphene on SiC sits on a buffer layer, the dielectric function of which is also measured with SE for comparison to the pure sp2-bonded graphene layers.
Publisher
The Electrochemical Society
Cited by
3 articles.
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