Study of PECVD Silicon Oxynitride Thin Layers as ISFET Sensitive Insulator Surface for pH Detection-Reference-Cited by-同舟云学术

Study of PECVD Silicon Oxynitride Thin Layers as ISFET Sensitive Insulator Surface for pH Detection

Published:1992-02-01 Issue:2 Volume:139 Page:507-511
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Cros Y.¹²³,Jaffrezic‐Renault N.¹²³,Chovelon J. M.¹²³,Fombon J. J.¹²³

Affiliation:

1. L.E.P.E.S., C.N.R.S., Associé à l'Université J. Fourier, 166X, 38042 Grenoble Cedex, France

2. L.P.C.I., U.R.A. C.N.R.S. 404, Ecole Centrale de Lyon, BP 163, 69131 Ecully Cedex, France

3. Sociéte SOLEA‐TACUSSEL, 72‐78 rue d'Alsace, 69100 Villeurbanne, France

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2069246/pdf

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