Agglomeration in Porous Silicon Prepared from Si-Nanowire Structures

Abstract

Porous silicon nanowires (SiNWs) have shown excellent properties like low reflection and high luminescence characteristics in the visible region of the optical spectrum. This indicates that porous SiNWs have a great potential applications for optoelectronics and chemical sensors. In this work, silicon nanowires have been prepared at room temperature by the electroless etching method using a specific concentration of silver nitrate and hydrofluoric acid based solution. Subsequently, these prepared SiNWs have been etched through an electrolytic process using ethanol and hydrofluoric acid based solutions to obtain porous silicon nanostructures. The reflectance and photoluminescence properties of the SiNWs based porous silicon have been studied.