(Invited) Low Power Tunneling FET Technologies Using Ge/III-V Materials-Reference-Cited by-同舟云学术

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(Invited) Low Power Tunneling FET Technologies Using Ge/III-V Materials

Published:2017-08-01 Issue:4 Volume:80 Page:115-124
ISSN:1938-6737
Container-title:ECS Transactions
language:en
Short-container-title:ECS Trans.

Author:

Takagi Shinichi,Ahn Dae-Hwan,Noguchi Munetaka,Yoon Sanghee,Gotow Takahiro,Nishi Koichi,Kim Minsoo,Bae Tae-Eon,Katoh Takumi,Matsumura Ryo,Takaguchi Ryotaro,Takenaka Mitsuru

Publisher

The Electrochemical Society

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance enhancement of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical tunneling field-effect transistors with abrupt source impurity profile;Journal of Applied Physics;2019-12-07

2. Structural analysis and resistivity measurements of InAs and GaSb fins on 300 mm Si for vertical (T)FET;Journal of Applied Physics;2019-06-28

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