Investigation of Boron Diffusion into Silicon Using a Liquid Boron Tribromide Source and Its Application to Buried-Gate-Type Static-Induction Thyristors-Reference-Cited by-同舟云学术

Investigation of Boron Diffusion into Silicon Using a Liquid Boron Tribromide Source and Its Application to Buried-Gate-Type Static-Induction Thyristors

Published:2005 Issue:8 Volume:152 Page:G601
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Miyoshi Makoto,Shimizu Naohiro,Imanishi Yuichiro,Oda Osamu,Nishizawa Junichi

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference18 articles.

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4. Turn-off gain in p-n-p-n triodes

5. Recent developments in actuators: GTO and related devices

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